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Ellipsometric studies of sputtered silicon nitride on n-GaAsEllipsometry, which is the study of optical systems through their effect on polarized light, is a nondestructive technique offering extremely high sensitivity and in situ operation. One of the intriguing possibilities is to make use of the high sensitivity of ellipsometry for studying the very thin interface between an insulating film and a semiconductor substrate. Researchers have been especially interested in native or anodic oxides. In a recent study, Aspnes and Theeten used ellipsometry to study the interface between silicon and its thermally grown oxide, SiO2. These authors were able to conclude that the interface consisted of a 7 +/- 2 A graded region of atomically mixed silicon and oxygen. In this paper we report both analysis and experimental results for the system: sputtered silicon nitride on (100) n-type gallium arsenide.
Document ID
19950003075
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Peng, Y. K.
(Nebraska Univ. Lincoln, NE., United States)
Bu-Abbud, G.
(Nebraska Univ. Lincoln, NE., United States)
Alterovitz, S. A.
(Nebraska Univ. Lincoln, NE., United States)
Woollam, J. A.
(Nebraska Univ. Lincoln, NE., United States)
Bayraktarogulu, B.
(Universal Energy Systems, Inc., Dayton OH., United States)
Langer, D.
(Air Force Wright Aeronautical Labs. Wright-Patterson AFB, OH., United States)
Liu, D.
(NASA Lewis Research Center Cleveland, OH, United States)
Haugland, E.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 17, 2013
Publication Date
January 1, 1982
Publication Information
ISSN: 0022-5355
Subject Category
Nonmetallic Materials
Report/Patent Number
NASA-TM-110617
NAS 1.15:110617
Accession Number
95N71195
Distribution Limits
Public
Copyright
Public Use Permitted.
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