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InGaAs PV Device Development for TPV Power SystemsIndium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.
Document ID
19950005174
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Wilt, David M.
(NASA Lewis Research Center Cleveland, OH, United States)
Fatemi, Navid S.
(NASA Lewis Research Center Cleveland, OH, United States)
Hoffman, Richard W., Jr.
(NASA Lewis Research Center Cleveland, OH, United States)
Jenkins, Phillip P.
(NASA Lewis Research Center Cleveland, OH, United States)
Scheiman, David
(NASA Lewis Research Center Cleveland, OH, United States)
Lowe, Roland
(NASA Lewis Research Center Cleveland, OH, United States)
Landis, Geoffrey A.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 6, 2013
Publication Date
August 1, 1994
Subject Category
Energy Production And Conversion
Report/Patent Number
E-9084
NAS 1.15:106718
NASA-TM-106718
Meeting Information
Meeting: Conference on Thermophotovoltaic Generation of Electricity
Location: Copper Mountain, CO
Country: United States
Start Date: July 24, 1994
End Date: July 26, 1994
Accession Number
95N11587
Funding Number(s)
CONTRACT_GRANT: NAS3-27186
PROJECT: RTOP 233-01-0A
CONTRACT_GRANT: NAS3-27243
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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