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Minority-carrier lifetime in InP as a function of light biasMinority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism.
Document ID
19950012038
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Yater, Jane A.
(NASA Lewis Research Center Cleveland, OH, United States)
Weinberg, I.
(NASA Lewis Research Center Cleveland, OH, United States)
Jenkins, Phillip P.
(NYMA, Inc. Brook Park, OH., United States)
Landis, Geoffrey A.
(NYMA, Inc. Brook Park, OH., United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1995
Subject Category
Solid-State Physics
Report/Patent Number
NASA-TM-106821
NAS 1.15:106821
E-9363
Meeting Information
Meeting: World Conference on Photovoltaic Energy Conversion
Location: Waikoloa, HI
Country: United States
Start Date: December 5, 1994
End Date: December 9, 1994
Accession Number
95N18453
Funding Number(s)
PROJECT: RTOP 233-01-OA
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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