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Effect of the degree of disorder on electronic and optical properties in random superlatticesA three-dimensional tight-binding calculation is developed and used to study disorder effects in a realistic random superlattice. With increasing disorder, a tendency of possible indirect-direct band-gap transition is suggested. Direct evidence of mobility edges between localized and extended states in three-dimensional random systems is given. As system disorder increases, the optical absorption intensities increase dramatically from five to forty-five times stronger than the ordered (GaAs)(sub 1)/(AlAs)(sub 1) superlattice. It is believed that the degree of disorder significantly affects electronic and optical properties of GaAs/AlAs random superlattices.
Document ID
19950040420
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Wang, E. G.
(Univ. of Houston, Houston, TX United States)
Su, W. P.
(Univ. of Houston, Houston, TX United States)
Ting, C. S.
(Univ. of Houston, Houston, TX United States)
Date Acquired
August 16, 2013
Publication Date
September 1, 1994
Publication Information
Publication: Journal of Applied Physics
Volume: 76
Issue: 5
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
95A72019
Distribution Limits
Public
Copyright
Other

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