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Concentration transient analysis of antimony surface segregation during Si(100) molecular beam epitaxyAntimony surface segregation during Si(100) molecular beam epitaxy (MBE) was investigated at temperatures T(sub s) = 515 - 800 C using concentration transient analysis (CTA). The dopant surface coverage Theta, bulk fraction gamma, and incorporation probability sigma during MBE were determined from secondary-ion mass spectrometry depth profiles of modulation-doped films. Programmed T(sub s) changes during growth were used to trap the surface-segregated dopant overlayer, producing concentration spikes whose integrated area corresponds to Theta. Thermal antimony doping by coevaporation was found to result in segregation strongly dependent on T(sub s) with Theta(sub Sb) values up to 0.9 monolayers (ML): in films doped with Sb(+) ions accelerated by 100 V, Theta(sub Sb) was less than or equal to 4 x 10(exp -3) ML. Surface segregation of coevaporated antimony was kinematically limited for the film growth conditions in these experiments.
Document ID
19950047762
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Markert, L. C.
(Illinois Univ. Urbana, IL, US, United States)
Greene, J. E.
(Illinois Univ. Urbana, IL, US, United States)
Ni, W.-X.
(Linkoeping Univ. Linkoeping, Sweden)
Hansson, G. V.
(Linkoeping Univ. Linkoeping, Sweden)
Sundgren, J.-E.
(Linkoeping Univ. Linkoeping, Sweden)
Date Acquired
August 16, 2013
Publication Date
January 1, 1991
Publication Information
Publisher: Elsevier Sequoia S.A.
Subject Category
Metallic Materials
Accession Number
95A79361
Funding Number(s)
CONTRACT_GRANT: DE-FG02-91ER-45439
Distribution Limits
Public
Copyright
Other

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