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Record Details

Record 78 of 624
Numerical study of the wave-vector dependence of the electron interband impact ionization rate in bulk GaAs
External Online Source: doi:10.1063/1.357775
Author and Affiliation:
Wang, Yang(Georgia Institute of Technology, Atlanta, GA, United States)
Brennan, Kevin F.(Georgia Institute of Technology, Atlanta, GA, United States)
Abstract: Ensemble Monte Carlo calculations of the electron interband impact ionization rate in bulk GaAs are presented using a wave-vector (k)-dependent formulation of the ionization transition rate. The transition rate is evaluated through the use of numerically generated wavefunctions determined via a k-p calculation within the first two conduction bands at numerous points within a finely spaced three-dimensional grid in k space. The transition rate is determined to be greatest for states within the second conduction band. Is is found that the interband impact ionization transition rate in bulk GaAs is best characterized as having an exceedingly soft threshold energy. As a consequence, the dead space, defined as the distance over which the ionization probability for a given carrier is assumed to be zero, is estimated to be much larger than that estimated using a harder threshold. These results have importance in the design of the multiquantum-well avalanche photodiodes.
Publication Date: Jul 15, 1994
Document ID:
19950055115
(Acquired Dec 28, 1995)
Accession Number: 95A86714
Subject Category: SOLID-STATE PHYSICS
Document Type: Journal Article
Publication Information: Journal of Applied Physics; p. p. 974-981; (ISSN 0021-8979); 76; 2
Publisher Information: United States
Contract/Grant/Task Num: NAGW-2753
Financial Sponsor: NASA; United States
Organization Source: NASA; Washington, DC, United States
Description: 8p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: GALLIUM ARSENIDES; ION IMPACT; ION PRODUCTION RATES; NUMERICAL ANALYSIS; WAVE FUNCTIONS; AVALANCHE DIODES; MONTE CARLO METHOD; QUANTUM WELLS
Imprint And Other Notes: Journal of Applied Physics vol. 76, no. 2 p. 974-981 July 15, 1994
Miscellaneous Notes: Research sponsored by NSF
Availability Source: Other Sources
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