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Sinterless Formation Of Contacts On Indium PhosphideImproved technique makes it possible to form low-resistivity {nearly equal to 10(Sup-6) ohm cm(Sup2)} electrical contacts on indium phosphide semiconductor devices without damaging devices. Layer of AgP2 40 Angstrom thick deposited on InP before depositing metal contact. AgP2 interlayer sharply reduces contact resistance, without need for sintering.
Document ID
19950070306
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Weizer, Victor G. (Sverdrup Technology Corp.)
Fatemi, Navid S. (Sverdrup Technology Corp.)
Date Acquired
August 16, 2013
Publication Date
October 1, 1995
Publication Information
Publication: NASA Tech Briefs
Volume: 19
Issue: 10
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
LEW-15814
Accession Number
95B10485
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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