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Sinterless Fabrication Of Contact Pads On InP DevicesResearch has shown that with proper choice of material, low-resistance contact pads deposited on solar cells and other devices by improved technique that does not involve sintering. Research directed at understanding mechanisms involved in contact-sintering process has resulted in identification of special group of materials that includes phosphides of gold, silver, and nickel; specifically, Au(2)P(3), AgP(2), and Ni(3)P. Incorporation of phosphide interlayer substantially reduces resistivity between gold current-carrying layer and indium phosphide substrate. Further research indicated only very thin interlayer of any of these compounds needed to obtain low contact resistance, without subjecting contact to destructive sintering process.
Document ID
19950070340
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Weizer, Victor G.
(NASA Lewis Research Center, Cleveland, OH.)
Fatemi, Navid S.
(Sverdrup Technology, Inc.)
Korenyi-Both, Andras L.
(Calspan Corp.)
Date Acquired
August 16, 2013
Publication Date
October 1, 1995
Publication Information
Publication: NASA Tech Briefs
Volume: 19
Issue: 10
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
LEW-15863
Accession Number
95B10519
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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