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High-Voltage MOSFET Switching CircuitCircuit reliably switches power at supply potential of minus 1,500 V, with controlled frequency and duty cycle. Used in argon-plasma ion-bombardment equipment for texturing copper electrodes, as described in "Texturing Copper To Reduce Secondary Emission of Electrons" (LEW-15898), also adapted to use in powering gaseous flash lamps and stroboscopes.
Document ID
19950070366
Document Type
Other - NASA Tech Brief
Authors
Jensen, Kenneth A. (NASA Lewis Research Center, Cleveland, OH.)
Date Acquired
August 16, 2013
Publication Date
November 1, 1995
Publication Information
Publication: NASA Tech Briefs
Volume: 19
Issue: 11
ISSN: 0145-319X
Subject Category
ELECTRONIC COMPONENTS AND CIRCUITS
Report/Patent Number
LEW-15986
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.