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Better Ohmic Contacts For InP Semiconductor DevicesFour design modifications enable fabrication of improved ohmic contacts on InP-based semiconductor devices. First modification consists of insertion of layer of gold phosphide between n-doped InP and metal or other overlayer of contact material. Second, includes first modification plus use of particular metal overlayer to achieve very low contact resistivities. Third, also involves deposition of Au(2)P(3) interlayer; in addition, refractory metal (W or Ta) deposited to form contact overlayer. In fourth, contact layer of Auln alloy deposited directly on InP. Improved contacts exhibit low electrical resistances and fabricated without exposing devices to destructive predeposition or postdeposition treatments.
Document ID
19950070368
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Weizer, Victor G.
(NASA Lewis Research Center, Cleveland, OH.)
Fatemi, Navid S.
(Sverdrup Technology, Inc.)
Date Acquired
August 16, 2013
Publication Date
November 1, 1995
Publication Information
Publication: NASA Tech Briefs
Volume: 19
Issue: 11
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
LEW-15497
LEW-15498
LEW-15747
Accession Number
95B10547
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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