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Optimization of GaN thin films via MOCVDA unique characteristic of every semiconductor is the amount of energy required to break an electron bond in the lowest band of allowed states, the valence band. The energy necessary to set an electron free and allow it to conduct in the material is termed the energy gap (Eg). Semiconductors with wide bandgap energies have been shown to possess properties for high power, high temperature, radiation resistance damage, and short wavelength optoelectronic applications. Gallium nitride, which has a wide gap of 3.39 eV, is a material that has demonstrated these characteristics. Various growth conditions are being investigated for quality gallium nitride heteroepitaxy growth via the technique of low pressure metal organic chemical vapor deposition (MOCVD) that can be used for device development.
Document ID
19960000398
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Dickens, Corey
(Howard Univ. Washington, DC, United States)
Wilson, Sylvia L.
(Howard Univ. Washington, DC, United States)
Date Acquired
September 6, 2013
Publication Date
August 1, 1995
Publication Information
Publication: NASA. Lewis Research Center, HBCUs Research Conference Agenda and Abstracts
Subject Category
Solid-State Physics
Accession Number
96N10398
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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