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InGaAs/InP solar cells for space applicationThe effects of irradiation of In(0.53)Ga(0.47)As/InP (InGaAs/InP) solar cells illuminated through a transparent InP substrate with 1 MeV electrons were measured. These solar cells were developed for bottom cells in tandem solar photovoltaic cell structures. Some InGaAs/InP heterostructures with four layers were grown by liquid phase epitaxy. The structure of the solar cells allowed lightly doped materials in n and p photoactive layers to be used. The base dopant levels ranged from 1.10(exp 17) to 5.10(exp 17) cm(exp -3). The open circuit voltage and the short circuit current were moderately degraded after irradiation with 10(exp 16) cm(exp-2) 1 MeV electrons. This behavior is explained in terms of the device structure and the n and p layer thicknesses.
Document ID
19960009271
Document Type
Conference Paper
Authors
Karlina, L. B.
(Ioffe (A. F.) Physical-Technical Inst. Saint Petersburg, Russia)
Kazantsev, A. B.
(Ioffe (A. F.) Physical-Technical Inst. Saint Petersburg, Russia)
Kozlovskii, V. V.
(Ioffe (A. F.) Physical-Technical Inst. Saint Petersburg, Russia)
Mokina, I. A.
(Ioffe (A. F.) Physical-Technical Inst. Saint Petersburg, Russia)
Shvarts, M. Z.
(Ioffe (A. F.) Physical-Technical Inst. Saint Petersburg, Russia)
Date Acquired
August 17, 2013
Publication Date
September 1, 1995
Publication Information
Publication: ESA, Proceedings of 4th European Space Power Conference (ESPC). Volume 2: Photovoltaic Generators, Energy Storage
Subject Category
Spacecraft Propulsion And Power
Distribution Limits
Public
Copyright
Other
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