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Low temperature Zn diffusion for GaSb solar cell structures fabricationLow temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.
Document ID
19960009322
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Sulima, Oleg V.
(Ioffe (A. F.) Physical-Technical Inst. Saint Petersburg, Russia)
Faleev, Nikolai N.
(Ioffe (A. F.) Physical-Technical Inst. Saint Petersburg, Russia)
Kazantsev, Andrej B.
(Ioffe (A. F.) Physical-Technical Inst. Saint Petersburg, Russia)
Mintairov, Alexander M.
(Ioffe (A. F.) Physical-Technical Inst. Saint Petersburg, Russia)
Namazov, Ali
(Ioffe (A. F.) Physical-Technical Inst. Saint Petersburg, Russia)
Date Acquired
August 17, 2013
Publication Date
September 1, 1995
Publication Information
Publication: ESA, Proceedings of 4th European Space Power Conference (ESPC). Volume 2: Photovoltaic Generators, Energy Storage
Subject Category
Energy Production And Conversion
Accession Number
96N16488
Distribution Limits
Public
Copyright
Other

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