NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Determination of the electrical conductivity of liquid Ge(0.95)Si(0.05)We have measured the electrical conductivity of molten germanium-silicon Ge(0.95)Si(0.05) from the liquidus temperature (1050 C) up to 1220 C. The data were acquired with a unique apparatus which utilizes the standard four-probe technique. The basic unit consists of a fused silica enclosure that contains hermetic glass-to-tungsten seals that can support vacuum pressures down to 10(exp -7) Torr. With calibration, the measurement error for the low vapor pressure materials of this study was typically less than 7%. The temperature dependence of the electrical conductivity of a Ge(0.95)Si(0.05) melt was found to vary from approximately 22,300/ohm/cm at the liquidus temperature down to approximately 16,000/ohm/cm at 1220 C. The negative temperature coefficient as well as the magnitude of these data clearly indicate that the molten material is metallic in nature despite the semiconducting properties of the solid.
Document ID
19960016916
Acquisition Source
Marshall Space Flight Center
Document Type
Reprint (Version printed in journal)
Authors
Rolin, T. D.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Szofran, F. R.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Date Acquired
August 17, 2013
Publication Date
January 1, 1995
Publication Information
ISSN: 0022-0248
Subject Category
Solid-State Physics
Report/Patent Number
NAS 1.15:111228
NASA-TM-111228
Accession Number
96N22524
Distribution Limits
Public
Copyright
Public Use Permitted.
Document Inquiry

Available Downloads

There are no available downloads for this record.
No Preview Available