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Skutterudite Compounds For Power Semiconductor DevicesNew semiconducting materials with p-type carrier mobility values much higher than state-of-art semiconductors discovered. Nine compounds, antimonides CoSb(sub3), RhSb(sub3), IrSb(sub3), arsenides CoAs(sub3), RhAs(sub3), IrAs(sub3), and phosphides CoP(sub3), RhP(sub3) and IrP(sub3), exhibit same skutterudite crystallographic structure and form solid solutions of general composition Co(1-x-y)RH(x)Ir(y)P(1-w-z)As(w)Sb(z). Materials exhibit high hole mobilities, high doping levels, and high electronic figures of merit. Some compositions show great potential for application to thermoelectric devices.
Document ID
19960018806
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Fleurial, Jean-Pierre
(Caltech)
Caillat, Thierry
(Caltech)
Borshchevsky, Alexander
(Caltech)
Vandersande, Jan
(Caltech)
Date Acquired
August 17, 2013
Publication Date
March 1, 1996
Publication Information
Publication: NASA Tech Briefs
Volume: 20
Issue: 3
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
NPO-19378
Accession Number
96B10111
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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