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Record 3 of 1573
Epitaxial Silicon Doped With Antimony
Author and Affiliation:
Huffman, James E.(Rockwell International Corp.)
Halleck, Bradley L.(Rockwell International Corp.)
Abstract: High-purity epitaxial silicon doped with antimony made by chemical vapor deposition, using antimony pentachloride (SbCI5) as source of dopant and SiH4, SiCI2H2, or another conventional source of silicon. High purity achieved in layers of arbitrary thickness. Epitaxial silicon doped with antimony needed to fabricate impurity-band-conduction photodetectors operating at wavelengths from 2.5 to 40 micrometers.
Publication Date: Mar 01, 1996
Document ID:
(Acquired May 08, 1996)
Accession Number: 96B10113
Subject Category: MATERIALS
Report/Patent Number: NPO-19425
Document Type: NASA Tech Brief
Publication Information: NASA Tech Briefs; p. P. 63; (ISSN 0145-319X); 20; 3
Publisher Information: United States
Financial Sponsor: NASA; United States
Organization Source: Jet Propulsion Lab., California Inst. of Tech.; Pasadena, CA, United States
Description: In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: No Copyright
Availability Source: National Technology Transfer Center (NTTC), Wheeling, WV
Availability Notes: Additional information available through: National Technology Transfer Center (NTTC), Wheeling, WV 26003, (Tel: 1-800-678-6882).
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