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Epitaxial Silicon Doped With AntimonyHigh-purity epitaxial silicon doped with antimony made by chemical vapor deposition, using antimony pentachloride (SbCI5) as source of dopant and SiH4, SiCI2H2, or another conventional source of silicon. High purity achieved in layers of arbitrary thickness. Epitaxial silicon doped with antimony needed to fabricate impurity-band-conduction photodetectors operating at wavelengths from 2.5 to 40 micrometers.
Document ID
19960018808
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Huffman, James E.
(Rockwell International Corp.)
Halleck, Bradley L.
(Rockwell International Corp.)
Date Acquired
August 17, 2013
Publication Date
March 1, 1996
Publication Information
Publication: NASA Tech Briefs
Volume: 20
Issue: 3
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
NPO-19425
Accession Number
96B10113
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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