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Infrared Detectors Containing Stacked Si(1-x)Ge(x)/Si LayersLong-wavelength-infrared detectors containing multiple layers of high-quality crystalline p(+) Si(1-x)Ge(x) alternating with layers of Si undergoing development. Each detector comprises stack of Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) photodetectors. In comparison with older HIP detectors containing single Si(1-x)Ge(x)/Si heterojunctions, developmental detectors feature greater quantum efficiencies and stronger photoresponses.
Document ID
19960021820
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Park, Jin S.
(Caltech)
Lin, True-Lon
(Caltech)
Jones, Eric
(Caltech)
Del Castillo, Hector
(Caltech)
Gunapala, Sarath
(Caltech)
Date Acquired
August 17, 2013
Publication Date
April 1, 1996
Publication Information
Publication: NASA Tech Briefs
Volume: 20
Issue: 4
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-19311
Accession Number
96B10156
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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