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PtSi/Si LWIR Detectors Made With p+ Doping SpikesPtSi/Si Schottky-barrier devices detecting long-wavelength infrared (LWIR) photons demonstrated. Essential feature of one of these devices is p+ "doping spike"; layer of Si about 10 Angstrom thick, located at PtSi/Si interface, and doped with electron acceptors (boron atoms) at concentration between 5 x 10(19) and 2 x 10(20) cm(-3). Doping spikes extend cutoff wavelengths of devices to greater values than otherwise possible.
Document ID
19960024403
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Lin, True-Lon (Caltech)
Park, Jin S. (Caltech)
George, Thomas (Caltech)
Fathauer, Robert W. (Caltech)
Jones, Eric W. (Caltech)
Maserjian, Joseph (Caltech)
Date Acquired
August 17, 2013
Publication Date
June 1, 1996
Publication Information
Publication: NASA Tech Briefs
Volume: 20
Issue: 6
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-19143
Accession Number
96B10259
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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