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AIN-Coated Al(2)O(3) Substrates For Electronic CircuitsType of improved ceramic substrate for high-frequency, high-power electronic circuits combines relatively high thermal conductivity of aluminum nitride with surface smoothness of alumina. Consists of 15-micrometer layer of AIN deposited on highly polished alumina. Used for packaging millimeter-wave gallium arsenide transmitter chips, power silicon chips, and like.
Document ID
19960024408
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Kolawa, Elzbieta (Caltech)
Lowry, Lynn (Caltech)
Herman, Martin (Caltech)
Lee, Karen (Caltech)
Date Acquired
August 17, 2013
Publication Date
June 1, 1996
Publication Information
Publication: NASA Tech Briefs
Volume: 20
Issue: 6
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-19363
Accession Number
96B10264
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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