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High-temperature oxidation behavior of reaction-formed silicon carbide ceramicsThe oxidation behavior of reaction-formed silicon carbide (RFSC) ceramics was investigated in the temperature range of 1100 to 1400 C. The oxidation weight change was recorded by TGA; the oxidized materials were examined by light and electron microscopy, and the oxidation product by x-ray diffraction analysis (XRD). The materials exhibited initial weight loss, followed by passive weight gain (with enhanced parabolic rates, k(sub p)), and ending with a negative (logarithmic) deviation from the parabolic law. The weight loss arose from the oxidation of residual carbon, and the enhanced k(sub p) values from internal oxidation and the oxidation of residual silicon, while the logarithmic kinetics is thought to have resulted from crystallization of the oxide. The presence of a small amount of MoSi, in the RFSC material caused a further increase in the oxidation rate. The only solid oxidation product for all temperatures studied was silica.
Document ID
19960038407
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Ogbuji, Linus U. J. T.
(NYMA, Inc. Cleveland, OH United States)
Singh, M.
(NYMA, Inc. Cleveland, OH United States)
Date Acquired
September 6, 2013
Publication Date
December 1, 1995
Subject Category
Nonmetallic Materials
Report/Patent Number
NAS 1.15:111682
NASA-TM-111682
Accession Number
96N30879
Distribution Limits
Public
Copyright
Public Use Permitted.
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