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InP tunnel junctions for InP/InGaAs tandem solar cellsWe report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.
Document ID
19960045573
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Vilela, Mauro F.
(Houston Univ. TX United States)
Freundlich, Alex
(Houston Univ. TX United States)
Renaud, P.
(Houston Univ. TX United States)
Medelci, N.
(International Stellar Technology, Inc. Houston, TX United States)
Bensaoula, A.
(International Stellar Technology, Inc. Houston, TX United States)
Date Acquired
August 17, 2013
Publication Date
February 1, 1996
Publication Information
Publication: Space Photovoltaic Research and Technology 1995
Subject Category
Energy Production And Conversion
Accession Number
96N32476
Funding Number(s)
CONTRACT_GRANT: NASw-4093
OTHER: 93-03652-243
OTHER: 93-03652-224
OTHER: 93-03652-260
OTHER: 93-03652-236
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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