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Record 58 of 4088
ZnO films on /001/-cut (110)-propagating GaAs substrates for surface acoustic wave device applications
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Author and Affiliation:
Hickernell, Frederick S.(Motorola Inc., Government and Systems Technology Group., Scottsdale, AZ United States)
Higgins, Robert J.(Motorola Inc., Scottsdale, AZ United States)
Jen, Cheng-Kuei(National Research Council of Canada, Industrial Materials Inst., Montreal, Quebec Canada)
Kim, Yoonkee(Georgia Inst. of Tech., Microelectronics Research Center., Atlanta, GA United States)
Hunt, William D.(Georgia Inst. of Tech., School of Electrical and Computer Engineering., Atlanta, GA United States)
Abstract: A potential application for piezoelectric films substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on /001/-cut group of (110) zone axes-propagating GaAs substrates are investigated in this article, including SAW velocity, effective piezoelectric coupling constant, propagation loss, diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 micron and with films of different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K(sup 2) and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO2 or Si3N4 on /001/-cut GaAs samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. It was found that near the group of (110) zone axes propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the (100) direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.
Publication Date: May 01, 1995
Document ID:
19960049733
(Acquired Oct 30, 1996)
Accession Number: 96N33990
Subject Category: SOLID-STATE PHYSICS
Report/Patent Number: NASA-CR-201108, NAS 1.26:201108
Document Type: Reprint
Publication Information: IEEE Transactions on Ultrasonics, Ferroelastics, and Frequency Control (ISSN 0885-3010); Volume 42; No. 3
Contract/Grant/Task Num: NAGW-2753
Financial Sponsor: National Science Foundation; Washington, DC United States
NASA; Washington, DC United States
Bell-Northern Research Ltd.; Ottawa, Ontario Canada
Organization Source: Georgia Inst. of Tech.; Atlanta, GA United States
Description: 11p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright; Distribution as joint owner in the copyright
NASA Terms: GALLIUM ARSENIDES; SURFACE ACOUSTIC WAVE DEVICES; ACOUSTIC PROPERTIES; FILM THICKNESS; INTERFERENCE GRATING; ZINC OXIDES; PIEZOELECTRICITY; SUBSTRATES; ACOUSTIC VELOCITY; PROPAGATION VELOCITY; VELOCITY COUPLING; REFLECTANCE; METALLIZING
Imprint And Other Notes: Repr. from IEEE Transactions On Ultrasonics, Ferroelectrics, And Frequency Control , v 42, no. 3, May 1995 p 351-361
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