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High Performance InGaAs/GaAs Quantum Well Infrared PhotodetectorsWe have measured the optical and transport properties of In(0.2)Ga(0.8)As/GaAs quantum well infrared photodetectors based on bound-to-bound, bound-to-quasibound, and bound-to-continuum intersubband transitions. Excellent hot electron transport and high detectivity D*=1.8 x 1O(exp 10) cm square root of Hz/W (at lambda(sub p)=16.7 microns) were achieved at temperature T=40 K.
Document ID
19970012360
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.111232
Authors
Gunapala, S. D. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Park, J. S. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Lin, T. L. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Pike, W. T. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Liu, J. K. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Bandara, K. M. S. V. (Bell Telephone Labs., Inc. Murray Hill, NJ United States)
Levine, B. F. (Bell Telephone Labs., Inc. Murray Hill, NJ United States)
Sarusi, G. (Bell Telephone Labs., Inc. Murray Hill, NJ United States)
Date Acquired
August 17, 2013
Publication Date
June 20, 1994
Publication Information
Publication: Applied Physics Letters
Publisher: American Inst. of Physics
Volume: 64
Issue: 25
ISSN: 0003-6951
Subject Category
Thermodynamics And Statistical Physics
Report/Patent Number
NASA-CR-203354
NAS 1.26:203354
Accession Number
97N70954
Distribution Limits
Public
Copyright
Public Use Permitted.
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