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Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet OxygenThe oxidation kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen (P(sub H2O) = 0.1 atm) at temperatures between 1200 C and 1400 C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the oxidation kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation kinetics were examined in terms of the Deal and Grove model for oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high-purity Al2O3 reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium alumino-silicate scales.
Document ID
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Opila, Elizabeth J.
(Cleveland State Univ. Cleveland, OH United States)
Date Acquired
August 17, 2013
Publication Date
March 1, 1994
Publication Information
Publication: Journal of the American Ceramic Society
Volume: 77
Issue: 3
Subject Category
Inorganic And Physical Chemistry
Report/Patent Number
NAS 1.15:112024
Accession Number
Funding Number(s)
Distribution Limits
Public Use Permitted.
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