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RF Properties of Epitaxial Lift-Off HEMT DevicesEpitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted-off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing an enhancement of F(sub max)F(sub T) consistently shows an increase of 12-20% for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration.
Document ID
Document Type
Reprint (Version printed in journal)
External Source(s)
Young, Paul G.
(Toledo Univ. OH United States)
Alterovitz, Samuel A.
(NASA Lewis Research Center Cleveland, OH United States)
Mena, Rafael A.
(NASA Lewis Research Center Cleveland, OH United States)
Smith, Edwyn D.
(Toledo Univ. OH United States)
Date Acquired
August 17, 2013
Publication Date
November 1, 1993
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: 40
Issue: 11
ISSN: 0018-9383
Subject Category
Solid-State Physics
Report/Patent Number
NAS 1.15:112704
Accession Number
Distribution Limits
Public Use Permitted.
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