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Subsurface Growth of CoSi2 by Deposition of Co on Si-Capped CoSi2 Seed RegionsAt a growth temperature of 800 C, Co deposited on Si(111) diffuses through a Si cap and exhibits oriented growth on buried CoSi2 grains, a process referred to as endotaxy. This occurs preferentially to surface nucleation of CoSi2 provided the thickness of the Si cap is less than a critical value between 100 and 200 nm for a deposition rate of 0.01 nm/s. Steady-state endotaxy is modeled under the assumption that the process is controlled by Co diffusion.
Document ID
19970022014
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
Authors
Fathauer, R. W.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
George, T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Pike, W. T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Date Acquired
August 17, 2013
Publication Date
January 1, 1991
Publication Information
Publication: Material Research Society Symposium Proceedings
Publisher: Materials Research Society
Volume: 220
Subject Category
Solid-State Physics
Report/Patent Number
NAS 1.26:204425
NASA-CR-204425
Accession Number
97N72073
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Public Use Permitted.
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