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Ballistic-Electron-Emission-Microscopy of Strained Si(sub 1-x)Ge(sub x) LayersBallistic-electron-emission microscopy (BEEM) has been used to investigate the effects of strain on Si(sub 1-x)Ge(sub x) alloys. Lifting of the degeneracy of the conduction-band minimum of Si(sub 1-x)Ge(sub x), due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures. Experimental values for this conduction-band splitting agree well with calculations. In addition, an unexpected heterogeneity in the strain of the Si(sub 1-x)Ge(sub x) layer is introduced by deposition of Au. This effect, not observed with Ag, is attributed to species interdiffusion and has important implications for metal-semiconductor devices based oil pseudomorphic Si(sub 1-x)Ge(sub x)/Si material systems.
Document ID
19970023465
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
Authors
Bell, L. D.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Milliken, A. M.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Manion, S. J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Kaiser, W. J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Fathauer, R. W.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Pike, W. T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Date Acquired
August 17, 2013
Publication Date
September 15, 1994
Publication Information
Publication: Physical Review B: Rapid Communications
Publisher: The American Physical Society
Volume: 50
Issue: 11
ISSN: 0163-1829
Subject Category
Optics
Report/Patent Number
NASA-CR-203684
NAS 1.26:203684
Accession Number
97N72187
Distribution Limits
Public
Copyright
Public Use Permitted.
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