NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Process and Radiation Induced Defects in Electronic Materials and DevicesProcess and radiation induced defects are characterized by a variety of electrical techniques, including capacitance-voltage measurements and charge pumping. Separation of defect type into stacking faults, displacement damage, oxide traps, interface states, etc. and their related causes are discussed. The defects are then related to effects on device parameters. Silicon MOS technology is emphasized. Several reviews of radiation effects and silicon processing exist.
Document ID
19970028681
Acquisition Source
Johnson Space Center
Document Type
Conference Paper
Authors
Washington, Kenneth
(Prairie View Agricultural and Mechanical Coll. TX United States)
Fogarty, T. N.
(Prairie View Agricultural and Mechanical Coll. TX United States)
Date Acquired
August 17, 2013
Publication Date
January 1, 1997
Publication Information
Publication: The First National Student Conference: NASA University Research Centers at Minority Institutions
Subject Category
Electronics And Electrical Engineering
Accession Number
97N27410
Funding Number(s)
CONTRACT_GRANT: NAG9-331
CONTRACT_GRANT: NAG9-333
CONTRACT_GRANT: NAG9-659
CONTRACT_GRANT: NAG5-929
Distribution Limits
Public
Copyright
Public Use Permitted.
Document Inquiry

Available Downloads

There are no available downloads for this record.
No Preview Available