NASA Logo, External Link
Facebook icon, External Link to NASA STI page on Facebook Twitter icon, External Link to NASA STI on Twitter YouTube icon, External Link to NASA STI Channel on YouTube RSS icon, External Link to New NASA STI RSS Feed AddThis share icon
 

Record Details

Record 52 of 45643
Process and Radiation Induced Defects in Electronic Materials and Devices
Availability: Available in document 19970028662 on p. 142-147, or for help Contact the Information Desk
Author and Affiliation:
Washington, Kenneth(Prairie View Agricultural and Mechanical Coll., Center for Applied Radiation Research, TX United States)
Fogarty, T. N.(Prairie View Agricultural and Mechanical Coll., Center for Applied Radiation Research, TX United States)
Abstract: Process and radiation induced defects are characterized by a variety of electrical techniques, including capacitance-voltage measurements and charge pumping. Separation of defect type into stacking faults, displacement damage, oxide traps, interface states, etc. and their related causes are discussed. The defects are then related to effects on device parameters. Silicon MOS technology is emphasized. Several reviews of radiation effects and silicon processing exist.
Publication Date: Jan 01, 1997
Document ID:
19970028681
(Acquired Oct 16, 1997)
Accession Number: 97N27410
Subject Category: ELECTRONICS AND ELECTRICAL ENGINEERING
Document Type: Conference Paper
Publication Information: SEE parent document record, "The First National Student Conference: NASA University Research Centers at Minority Institutions"; p. 142-147; NASA-CR-205049
Contract/Grant/Task Num: NAG5-929; NAG9-331; NAG9-333; NAG9-659
Financial Sponsor: NASA Goddard Space Flight Center; Greenbelt, MD United States
NASA Johnson Space Center; Houston, TX United States
Organization Source: Prairie View Agricultural and Mechanical Coll.; Center for Applied Radiation Research; TX United States
Description: 6p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright; Distribution as joint owner in the copyright
NASA Terms: RADIATION EFFECTS; CAPACITANCE-VOLTAGE CHARACTERISTICS; DEFECTS; ELECTRONIC EQUIPMENT; DISPLACEMENT; DAMAGE; SILICON; TRAPS
› Back to Top
Find Similar Records
NASA Logo, External Link
NASA Official: Gerald Steeman
Site Curator: STI Program
Last Modified: September 08, 2011
Contact Us