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Quantum cascade light emitting diodes based on type-2 quantum wellsThe authors have demonstrated room-temperature CW operation of type-2 quantum cascade (QC) light emitting diodes at 4.2 (micro)m using InAs/InGaSb/InAlSb type-2 quantum wells. The type-2 QC configuration utilizes sequential multiple photon emissions in a staircase of coupled type-2 quantum wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was compared of 20 periods of active regions separated by digitally graded quantum well injection regions. The maximum average output power is about 250 (micro)W at 80 K, and 140 (micro)W at 300 K at a repetition rate of 1 kHz with a duty cycle of 50%.
Document ID
19970031556
Acquisition Source
Headquarters
Document Type
Reprint (Version printed in journal)
Authors
Lin, C. H.
(Houston Univ. TX United States)
Yang, R. Q.
(Houston Univ. TX United States)
Zhang, D.
(Houston Univ. TX United States)
Murry, S. J.
(Houston Univ. TX United States)
Pei, S. S.
(Houston Univ. TX United States)
Allerman, A. A.
(Sandia National Labs. Albuquerque, NM United States)
Kurtz, S. R.
(Sandia National Labs. Albuquerque, NM United States)
Date Acquired
August 17, 2013
Publication Date
January 21, 1997
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NAS 1.15:112622
CONF-970231-6
DE97-003207
NASA-TM-112622
SAND-97-0347C
Meeting Information
Meeting: SPIE International Symposium
Location: San Jose, CA
Country: United States
Start Date: February 8, 1997
End Date: February 14, 1997
Accession Number
97N28686
Funding Number(s)
CONTRACT_GRANT: DE-AC04-94AL-85000
CONTRACT_GRANT: NAGw-977
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Keywords
Light Emitting Diodes

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