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Depth Profiling Analysis of Aluminum Oxidation During Film Deposition in a Conventional High Vacuum SystemThe oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectroscopy (XPS) and depth profiling. The state of the Al layer was preserved by coating it with a protective MgF2 layer in the deposition chamber. Oxygen concentrations in the film layers were determined as a function of sputter time (depth into the film). The results show that an oxidized layer is formed at the start of Al deposition and that a less extensively oxidized Al layer is deposited if the deposition rate is fast. The top surface of the Al layer oxidizes very quickly. This top oxidized layer may be thicker than has been previously reported by optical methods. Maximum oxygen concentrations measured by XPS at each Al interface are related to pressure to rate ratios determined during the Al layer deposition.
Document ID
Document Type
Reprint (Version printed in journal)
External Source(s)
Kim, Jongmin
(Alabama Univ. Huntsville, AL United States)
Weimer, Jeffrey J.
(Alabama Univ. Huntsville, AL United States)
Zukic, Muamer
(Alabama Univ. Huntsville, AL United States)
Torr, Douglas G.
(Alabama Univ. Huntsville, AL United States)
Date Acquired
August 17, 2013
Publication Date
January 1, 1994
Publication Information
Publication: Journal of Vacuum Science Technology. Part A
Volume: 12
Issue: 6
ISSN: 0734-2101
Subject Category
Metallic Materials
Report/Patent Number
NAS 1.26:205120
Accession Number
Funding Number(s)
Distribution Limits
Public Use Permitted.
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