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Radiation Resistance Studies of Amorphous Silicon Alloy Photovoltaic MaterialsThe radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys was investigated. A number of different device structures were irradiated with 1.0 MeV protons. The cells were insensitive to proton fluences below 1E12 sq cm. The parameters of the irradiated cells were restored with annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters for fluences below lE14 sq cm require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed in dark I-V measurements. The current mechanisms were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.
Document ID
19980023504
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Woodyard, James R.
(Wayne State Univ. Detroit, MI United States)
Date Acquired
September 6, 2013
Publication Date
January 1, 1994
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA/CR-94-206676
NAS 1.26:206676
Funding Number(s)
CONTRACT_GRANT: NAG3-833
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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