Design, Operation, and Modeling of a Vertical APCVD Reactor for Silicon Carbide Film Growth

An atmospheric pressure chemical vapor deposition (APCVD) reactor utilizing a unique vertical geometry which enables 3C-SiC films to be grown on two, 4-inch diameter Si wafers has been constructed. Contrary to expectations, 3C-SiC films grown in this reactor are thickest at the downstream end of the substrates. To better understand the reason for the thickness distribution on the wafers, an axisymmetric finite-element model of the gas flow in the reactor was constructed. The model uses the ANSYS53 Flowtran package and includes compressible and temperature-dependent fluid properties in laminar or turbulent flow. It does not include reaction chemistry or unsteady flow. The ANSYS53 results predict that the cool, inlet fluid falls through the inlet pipe and the warm, diffuser region like a jet. This jet impinges on top of the susceptor and gets diverted to the reactor side walls, where it flows to the bottom of the reactor, turns, and slowly rises along the face of the susceptor. This may explain why the SiC films are thickest at the downstream side of the wafers, as gas containing fresh reactants first passes over this region. Modeling results are presented for both one atmosphere and one half atmosphere reactor pressure.