Subparabolic Oxidation Behavior of Silicon Carbide at 1300 C

The phenomenon of subparabolic oxide growth rate, more the rule than the exception in the oxidation of silica formers, is examined in light of data sets acquired in SiC oxidation experiments at 1300 C. Negative deviation from parabolic kinetics is shown to correlate with oxide crystallinity. The data sets were analyzed to ascertain the predominant and contributing growth laws, and tested with models that describe the overall kinetics as combinations of the familiar growth laws.