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Some Aspects of PVT Low Supersaturation Nucleation and Contactless Crystal GrowthThe basic principles of the contactless growth of crystals from the vapor in combination with the process of low-supersaturation nucleation are discussed. The mathematical formulation of the morphological stability criterion in vapor growth systems is given and its implications for contactless growth technique are analyzed. A diagram for selection of proper temperature conditions for growth of CdTe crystals is presented.
Document ID
19990046765
Acquisition Source
Marshall Space Flight Center
Document Type
Reprint (Version printed in journal)
Authors
Grasza, K.
(Polish Academy of Sciences Warsaw, Poland)
Palosz, W.
(Universities Space Research Association Huntsville, AL United States)
Date Acquired
August 19, 2013
Publication Date
January 1, 1996
Publication Information
Publication: Crystal Research and Technology
Subject Category
Solid-State Physics
Funding Number(s)
CONTRACT_GRANT: NCC8-66
Distribution Limits
Public
Copyright
Other

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