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X-Ray Photoelectron Spectroscopy Study of the Heating Effects on Pd/6H-SiC Schottky StructureX-ray photoelectron spectroscopy is used to study the effects of heat treatment on the Pd/6H-SiC Schottky diode structure. After heating the structure at 425 C for 140 h, a very thin surface layer of PdO mixed with SiO(x) formed on the palladium surface of the Schottky structure. Heat treatment promoted interfacial diffusion and reaction which significantly broadened the interfacial region. In the interfacial region, the palladium concentration decreases with depth, and the interfacial products are Pd(x)Si (x = 1,2,3,4). In the high Pd concentration regions, Pd4Si is the major silicide component while gr and Pd2Si are major components in the low Pd concentration region. At the center of the interface, where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si, x= 1,2,3,4) are approximately equal. The surface passivation layer composed of PdO and SiO, may significantly affect the electronic and catalytic properties of the surface of the Schottky diode which plays a major role in gas detection. The electronic properties of the Schottky structure may be dominated by a (Pd+Pd(x)Si)/SiC interface. In order to stabilize the properties of the Schottky structure the surface and interface diffusion and reactions must be controlled.
Document ID
19990063782
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Chen, Liang-Yu
(NASA Lewis Research Center Cleveland, OH United States)
Hunter, Gary W.
(NASA Lewis Research Center Cleveland, OH United States)
Neudeck, Philip G.
(NASA Lewis Research Center Cleveland, OH United States)
Knight, Dak
(NASA Lewis Research Center Cleveland, OH United States)
Date Acquired
August 19, 2013
Publication Date
September 1, 1998
Publication Information
Publication: Journal of Vacuum Science and Technology A
Publisher: American Inst. of Physics
Volume: 16
Issue: 5
ISSN: 0734-2101
Subject Category
Physics (General)
Distribution Limits
Public
Copyright
Other

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