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spray chemical vapor deposition of culns2 thin films for application in solar cell devicesChalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300-400 C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 C. At even higher temperatures (500 C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.
Document ID
19990063783
Document Type
Reprint (Version printed in journal)
Authors
Hollingsworth, Jennifer A.
(Washington Univ. Seattle, WA United States)
Buhro, William E.
(Washington Univ. Seattle, WA United States)
Hepp, Aloysius F.
(NASA Lewis Research Center Cleveland, OH United States)
Jenkins. Philip P.
(NASA Lewis Research Center Cleveland, OH United States)
Stan, Mark A.
(NASA Lewis Research Center Cleveland, OH United States)
Date Acquired
August 19, 2013
Publication Date
January 1, 1998
Publication Information
Publication: Materials Research Society Symposium Proceedings
Volume: 495
Subject Category
Energy Production and Conversion
Funding Number(s)
CONTRACT_GRANT: NSF CHE-91-58369
Distribution Limits
Public
Copyright
Other