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Pressure Effect in ZnO Films Using Off-Axis Sputtering DepositionZnO films are deposited on (0001) sapphire, (001) Si and quartz substrates using the off-axis reactive magnetron sputtering deposition. Based on film thickness measurements, three transport regions of sputtered particles are observed when films are deposited in the pressure regions of 5 mtorr - 150 mtorr. X-ray diffraction, scanning probes microscopy, and electrical measurements are also used to characterize these films. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. The epitaxial films deposited at high pressure reveal a flat surface with some hexagonal facets. The density of hexagonal facets decreases when the growth pressure is reduced. The resistivity of these epitaxial films also depends on the growth pressures. A relationship between the pressure effects and film properties are discussed.
Document ID
19990108598
Acquisition Source
Marshall Space Flight Center
Document Type
Reprint (Version printed in journal)
Authors
Zhu, Shen
(Universities Space Research Association Huntsville, AL United States)
Su, C.-H.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Lehoczky, S. L.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Peters, P.
(NASA Marshall Space Flight Center Huntsville, AL United States)
George, M. A.
(Alabama Univ. Huntsville, AL United States)
Date Acquired
August 19, 2013
Publication Date
January 1, 1999
Subject Category
Nonmetallic Materials
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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