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Record 40 of 3156
Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells
Availability: Go to Request Form
Author and Affiliation:
Weinberg, I.(NASA Lewis Research Center, Cleveland, OH United States)
Rybicki, G. C.(NASA Lewis Research Center, Cleveland, OH United States)
Vargas-Aburto, C.(Kent State Univ., OH United States)
Jain, R. K.(Toledo Univ., OH United States)
Scheiman, D.(NYMA, Inc., Brook Park, OH United States)
Abstract: InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.
Publication Date: Sep 01, 1994
Document ID:
20000032828
(Acquired Apr 28, 2000)
Subject Category: ENERGY PRODUCTION AND CONVERSION
Document Type: Conference Paper
Publication Information: SEE 20000032812 "Proceedings of the 13th Space Photovoltaic Research and Technology Conference (SPRAT 13)"; p. 149-158; NASA-CP-3278
Financial Sponsor: NASA Lewis Research Center; Cleveland, OH United States
Organization Source: NASA Lewis Research Center; Cleveland, OH United States
Description: 10p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: No Copyright
NASA Terms: PERFORMANCE PREDICTION; DEFECTS; INDIUM PHOSPHIDES; SOLAR CELLS; PROTONS; IRRADIATION; MAJORITY CARRIERS; DOPED CRYSTALS; CARRIER DENSITY (SOLID STATE); ZINC; SPECTROSCOPIC ANALYSIS; METALORGANIC CHEMICAL VAPOR DEPOSITION; INTERSTITIALS; FLUENCE; EMITTERS; ELECTRON IRRADIATION; DIFFUSION; DEPLETION; DEGRADATION; ACTIVATION ENERGY
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