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Study of Doped ZnO Films Synthesized by Combining Vapor Gases and Pulsed Laser DepositionThe properties and structure of the ZnO material are similar to those of the GaN. Since an excitonic binding energy of ZnO is about 60 meV, it has strong potential for excitonic lasing at the room temperature. This makes synthesizing ZnO films for applications attractive. However, there are several hurdles in fabricating electro-optical devices from ZnO. One of those is in growing doped p-type ZnO films. Although techniques have been developed for the doping of both p-type and n-type ZnO, this remains an area that can be improved. In this presentation, we will report the experimental results of using both thermal vapor and pulsed laser deposition to grow doped ZnO films. The films are deposited on (0001) sapphire, (001) Si and quartz substrates by ablating a ZnO target. The group III and V elements are introduced into the growth chamber using inner gases. Films are characterized by x-ray diffraction, scanning probe microscopy, energy dispersive spectroscopy, Auger electron spectroscopy, and electrical measurements. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. Film surface morphology reveals an island growth pattern, but the size and density of these islands vary with the composition of the reactive gases. The electrical resistivity also changes with the doped elements. The relationship between the doping elements, gas composition, and film properties will be discussed.
Document ID
Document Type
Conference Paper
Zhu, Shen
(Universities Space Research Association Huntsville, AL United States)
Su, Ching-Hua
(NASA Marshall Space Flight Center Huntsville, AL United States)
Lehoczky, Sandor L.
(NASA Marshall Space Flight Center Huntsville, AL United States)
George, M. A.
(Alabama Univ. Huntsville, AL United States)
Date Acquired
August 19, 2013
Publication Date
January 1, 2000
Subject Category
Nonmetallic Materials
Meeting Information
7th IUMRS-ICEM: Electronic Materials in Symposium D: Photon-induced Material Processing(Strasbourg)
Distribution Limits
Work of the US Gov. Public Use Permitted.

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