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Comparison of InGaAs(100) Grown by Chemical Beam Epitaxy and Metal Organic Chemical Vapor DepositionSecondary ion mass spectrometry is used to study the effects of substrate temperature on the composition and growth rate of InGaAs/InP(100) multilayers grown by chemical beam epitaxy, metal-organic chemical vapor deposition and solid source molecular beam epitaxy. The growth kinetics of the material grown by the different techniques are analyzed and compared.
Document ID
20000080136
Acquisition Source
Glenn Research Center
Document Type
Reprint (Version printed in journal)
Authors
Williams, M. D.
(Clark-Atlanta Univ. GA United States)
Greene, A. L.
(Clark-Atlanta Univ. GA United States)
Daniels-Race, T.
(Duke Univ. Durham, NC United States)
Lum, R. M.
(Lucent Technologies Murray Hill, NJ United States)
Date Acquired
August 19, 2013
Publication Date
January 1, 2000
Publication Information
Publication: Applied Surface Science
Publisher: Elsevier Science B.V.
Volume: 157
ISSN: 0169-4332
Subject Category
Solid-State Physics
Funding Number(s)
CONTRACT_GRANT: NSF 333-1458
CONTRACT_GRANT: DOE-323-0166
CONTRACT_GRANT: NAG3-1973
Distribution Limits
Public
Copyright
Other

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