NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
The Preparation Conditions of Chromium Doped ZnSe and Their Effect on The Infrared Luminescence PropertiesWe report the investigation by photoluminescence lifetime measurements of the near-IR emissions from a series of chromium-doped ZnSe samples, correlated to their preparation conditions. The samples were polycrystalline or single crystals prepared by post growth diffusion doping or single crystals doped during growth by the Physical Vapor Transport method. Room temperature lifetime values between 6 and 8 microseconds were measured for samples with Cr (2+) concentrations from low 10 (exp 17) to high 10 (exp 18) per cubic centimeter range. Lifetime data taken down to 78 K was found to be rather temperature independent, reconfirming previous reports indicating a quantum yield of the corresponding emission of close to 100% at room temperature. A strong decrease in the room temperature lifetime was found for chromium concentrations higher than 10 (exp 19) per cubic centimeter.
Document ID
20000110584
Acquisition Source
Marshall Space Flight Center
Document Type
Preprint (Draft being sent to journal)
Authors
Burger, A.
(Fisk Univ. Nashville, TN United States)
Chattopadhyay, K.
(Fisk Univ. Nashville, TN United States)
Ndap, J.-O.
(Fisk Univ. Nashville, TN United States)
Ma, X.
(Fisk Univ. Nashville, TN United States)
Morgan, S. H.
(Fisk Univ. Nashville, TN United States)
Rablau, C. I.
(West Virginia Univ. Morgantown, WV United States)
Su, C.-H.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Feth, S.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Page, Ralph H.
(Lawrence Livermore National Lab. Livermore, CA United States)
Schaffers, Kathleen I.
(Lawrence Livermore National Lab. Livermore, CA United States)
Rose, M. Franklin
(NASA Marshall Space Flight Center Huntsville, AL United States)
Date Acquired
August 19, 2013
Publication Date
January 1, 2000
Subject Category
Solid-State Physics
Meeting Information
Meeting: Crystal Growth and Epitaxy
Location: Vail, CO
Country: United States
Start Date: August 13, 2000
End Date: August 18, 2000
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Available Downloads

There are no available downloads for this record.
No Preview Available