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quantum corrections to the 'atomistic' mosfet simulationsWe have introduced in a simple and efficient manner quantum mechanical corrections in our 3D 'atomistic' MOSFET simulator using the density gradient formalism. We have studied in comparison with classical simulations the effect of the quantum mechanical corrections on the simulation of random dopant induced threshold voltage fluctuations, the effect of the single charge trapping on interface states and the effect of the oxide thickness fluctuations in decanano MOSFETs with ultrathin gate oxides. The introduction of quantum corrections enhances the threshold voltage fluctuations but does not affect significantly the amplitude of the random telegraph noise associated with single carrier trapping. The importance of the quantum corrections for proper simulation of oxide thickness fluctuation effects has also been demonstrated.
Document ID
20010006020
Document Type
Reprint (Version printed in journal)
Authors
Asenov, Asen
(Glasgow Univ. United Kingdom)
Slavcheva, G.
(Glasgow Univ. United Kingdom)
Kaya, S.
(Glasgow Univ. United Kingdom)
Balasubramaniam, R.
(Glasgow Univ. United Kingdom)
Date Acquired
August 20, 2013
Publication Date
January 1, 2000
Publication Information
Publication: Repr. from Parallel Finite Element Simulation of 'Atomistic' Effects in Sub-0.1 micron Devices, 2000
Subject Category
Solid-State Physics
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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