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Effect of Single-Electron Interface Trapping in Decanano MOSFETs: A 3D Atomistic Simulation StudyWe study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path.
Document ID
20010007222
Acquisition Source
Ames Research Center
Document Type
Reprint (Version printed in journal)
Authors
Asenov, Asen
(Glasgow Univ. United Kingdom)
Balasubramaniam, R.
(Glasgow Univ. United Kingdom)
Brown, A. R.
(Glasgow Univ. United Kingdom)
Davies, J. H.
(Glasgow Univ. United Kingdom)
Date Acquired
August 20, 2013
Publication Date
January 1, 2000
Publication Information
Publication: Superlattices and Microstructures
Publisher: Academic Press
Subject Category
Solid-State Physics
Funding Number(s)
CONTRACT_GRANT: NAG2-1241
Distribution Limits
Public
Copyright
Other

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