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Efficient 3D 'Atomistic' Simulation Technique for Studying of Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Decanano MOSFETsA 3D 'atomistic' simulation technique to study random dopant induced threshold voltage lowering and fluctuations in sub 0.1 micron MOSFETs is presented. It allows statistical analysis of random impurity effects down to the individual impurity level. Efficient algorithms based on a single solution of Poisson's equation, followed by the solution of a simplified current continuity equation are used in the simulations.
Document ID
20010007224
Acquisition Source
Ames Research Center
Document Type
Reprint (Version printed in journal)
Authors
Asenov, Asen (Glasgow Univ. United Kingdom)
Date Acquired
August 20, 2013
Publication Date
January 1, 1998
Publication Information
Publication: Repr. from Parallel Finite Element Simulation of 'Atomistic' Effects in Sub-0.1 micron Devices, 2000
Publisher: Institute of Electrical and Electronic Engineers
Subject Category
Solid-State Physics
Funding Number(s)
CONTRACT_GRANT: NAG2-1241
Distribution Limits
Public
Copyright
Other

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