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Quantum Mechanical Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations and Lowering in Sub 0.1 Micron MOSFETsA detailed study of the influence of quantum effects in the inversion layer on the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs has been performed. This has been achieved using a full 3D implementation of the density gradient (DG) formalism incorporated in our previously published 3D 'atomistic' simulation approach. This results in a consistent, fully 3D, quantum mechanical picture which implies not only the vertical inversion layer quantisation but also the lateral confinement effects manifested by current filamentation in the 'valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical fluctuations, is an increase in both threshold voltage fluctuations and lowering.
Document ID
20010007225
Document Type
Reprint (Version printed in journal)
Authors
Asenov, Asen (Glasgow Univ. United Kingdom)
Slavcheva, G. (Glasgow Univ. United Kingdom)
Brown, A. R. (Glasgow Univ. United Kingdom)
Davies, J. H. (Glasgow Univ. United Kingdom)
Saini, Subhash (NASA Ames Research Center Moffett Field, CA United States)
Date Acquired
August 20, 2013
Publication Date
January 1, 1999
Publication Information
Publication: Repr. from Parallel Finite Element Simulation of 'Atomistic' Effects in Sub-0.1 micron Devices, 2000
Subject Category
Solid-State Physics
Meeting Information
IEDM 99
Funding Number(s)
CONTRACT_GRANT: NAG2-1241
Distribution Limits
Public
Copyright
Other