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Random Telegraph Signal Amplitudes in Sub 100 nm (Decanano) MOSFETs: A 3D 'Atomistic' Simulation StudyIn this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs. Both simulations using continuous doping charge and random discrete dopants in the active region of the MOSFETs are presented. We have studied the dependence of the RTS amplitudes on the position of the trapped charge in the channel and on the device design parameters. We have observed a significant increase in the maximum RTS amplitude when discrete random dopants are employed in the simulations.
Document ID
Document Type
Reprint (Version printed in journal)
Asenov, Asen (Glasgow Univ. United Kingdom)
Balasubramaniam, R. (Glasgow Univ. United Kingdom)
Brown, A. R. (Glasgow Univ. United Kingdom)
Davies, J. H. (Glasgow Univ. United Kingdom)
Saini, Subhash (NASA Ames Research Center Moffett Field, CA United States)
Date Acquired
August 20, 2013
Publication Date
January 1, 2000
Publication Information
Publication: Repr. from Parallel Element Simulation of 'Atomistic' Effects in Sub-0.1 micron Devices, 2000
Subject Category
Solid-State Physics
Meeting Information
IEDM 2000
Funding Number(s)
Distribution Limits