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Electronic Model of a Ferroelectric Field Effect TransistorA pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's. Each model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current from each model has similar values to an actual FFET that was measured experimentally. T'he input and o Output resistance in the models are also similar to that of the FFET. The models are valid for all frequencies below RF levels. No attempt was made to model the high frequency characteristics of the FFET. Each model can be used to design circuits using FFET's with standard electrical simulation packages. These circuits can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The models consist of only standard electrical components, such as BJT's, MOSFET's, diodes, resistors, and capacitors. Each model is compared to the experimental data measured from an actual FFET.
Document ID
20010021323
Acquisition Source
Marshall Space Flight Center
Document Type
Preprint (Draft being sent to journal)
Authors
MacLeod, Todd C.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Ho, Fat Duen
(Alabama Univ. Huntsville, AL United States)
Russell, Larry
Date Acquired
August 20, 2013
Publication Date
January 1, 2001
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Integrated Ferroelectrics
Location: Colorado Springs, CO
Country: United States
Start Date: March 11, 2001
Funding Number(s)
PROJECT: RTOP 101-58-15
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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