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Record 12 of 3745
A Coupled Plasma-Sheath Model for High Density Sources
Author and Affiliation:
Bose, Deepak(Eloret Corp., United States)
Govindan, T. R.(NASA Ames Research Center, Moffett Field, CA United States)
Meyyappan, M.(NASA Ames Research Center, Moffett Field, CA United States)
Abstract: High density, low pressure plasmas are used for etching and deposition in microelectronics fabrication processes. The process characteristics are strongly determined by the ion energy distribution (IED) and the ion flux arriving at the substrate that are responsible for desorption of etch products and neutral dissociation at the surface. The ion flux and energy are determined by a self- consistent modeling of the bulk plasma, where the ions and the neutral radicals are produced, and the sheath, where the ions are accelerated. Due to their widely different time scales, it is a formidable task to self-consistently resolve non-collisional sheath in a high density bulk plasma model. In this work, we first describe a coupled plasma-sheath model that attempts to resolve the non-collisional sheath in a reactor scale model. Second, we propose a semianalytical radio frequency (RF) sheath model to improve ion dynamics.
Publication Date: Jan 01, 2000
Document ID:
20010048414
(Acquired Jun 08, 2001)
Subject Category: PLASMA PHYSICS
Document Type: Preprint
Meeting Information: 15th International Symposium on Plasma Chemistry; 9-13 Jul. 2001; Orleans; France
Contract/Grant/Task Num: NAS2-99092; RTOP 632-62-01
Financial Sponsor: NASA Ames Research Center; Moffett Field, CA United States
Organization Source: NASA Ames Research Center; Moffett Field, CA United States
Description: 1p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: No Copyright
NASA Terms: DENSITY (MASS/VOLUME); LOW PRESSURE; PLASMAS (PHYSICS); PLASMA SHEATHS; FLUX (RATE); ETCHING; DEPOSITION; SUBSTRATES; RADIO FREQUENCIES; RADICALS; MICROELECTRONICS; ION DISTRIBUTION; FABRICATION; DISSOCIATION; DESORPTION
Availability Source: Other Sources
Availability Notes: Abstract Only
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