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Bridgman Growth of Detached GeSi CrystalsThe growth of detached crystals by the Bridgman technique, in which the growing crystal is not in contact with the crucible wall, has been observed both on earth and in microgravity conditions. Such detachment has particularly been in evidence in microgravity experiments, where the pressure head of the molten sample is absent. At present, the mechanisms contributing to the detachment are not completely understood and until recently detachment has not been reproducibly obtained. Key parameters which must be considered are the contact angle between the melt and the crucible and the growth angle. Another essential parameter is the pressure difference between the annular gap around the solid below the melt and the volume above the melt. Here we present results of the growth of Ge(0.98)Si(0.02) using adjustments in the applied temperature profile to control the pressure difference between the bottom and top of the melt. The technique is less susceptible to sample contamination than controlling the pressure by connecting the crucible to external gas sources. Using this technique, a pressure difference is created by decreasing the temperature in the volume above the melt while the sample is molten but prior to growth. A maximum pressure difference approximately equal to the pressure head of the molten sample can thus be obtained. Several GeSi crystals were grown in pyrolitic boron nitride crucibles. When a pressure difference was applied, samples were reproducibly grown mostly detached. For comparison, samples were also grown in a configuration in which gas could pass freely between the gap below the melt and the volume above the melt and no pressure difference could be established. These samples were initially attached. Existence of detachment was determined both by measuring the radius of the samples with a profilometer and by observations of the sample surfaces with optical and electron microscopy. The gap thickness between the crucible and detached crystal was on the order of 10 micron. The surfaces of the attached areas of the crystals had the same shape as the interior crucible wall whereas in the detached areas the crystal facets could usually be observed.
Document ID
20010048746
Acquisition Source
Marshall Space Flight Center
Document Type
Preprint (Draft being sent to journal)
Authors
Volz, M. P.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Schweizer, M.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Kaiser, N.
(Freiburg Univ. Germany)
Cobb, S. D.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Vujisic, L.
(Cape Simulations, Inc. Newton, MA United States)
Motakef, S.
(Cape Simulations, Inc. Newton, MA United States)
Szofran, F. R.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Rose, M. Franklin
Date Acquired
August 20, 2013
Publication Date
January 1, 2001
Subject Category
Solid-State Physics
Meeting Information
Meeting: 13th International Conference on Crystal Growth
Location: Kyoto
Country: Japan
Start Date: July 30, 2001
End Date: August 4, 2001
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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